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Material: Boron Nitride (BN), film

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Property↑↓Value↑↓Conditions↑↓Reference↑↓
Hardness4.2 GPaPrepared by rf sputtering method on Si and then ion implanted with Ti,values measured by X-ray diffraction and ultra-low load nanoindentation method,Ti dose=1E+17 per cm2,observed phases=B & TiB2.Vacuum,Vol 46,number 8-10,1995, p.953
Hardness1.6 GPaprepared by rf sputtering method on Si and then ion implanted with Ti,values measured by X-ray diffraction and ultra-low load noindentation method,Ti dose=1E+17 per cm2, observed phases=B & TiB2,annealed at 773K for 3 hours.Vacuum,Vol 46,number 8-10,1995, p.953
Hardness1.7 GPaPrepared by rf sputtering method on Si and then ion implanted with Ti,values measured by X-ray diffraction and ultra-low nanoindentation method,Ti dose=3E+17 per cm2,observed phases=TiN & TiB2,annealed at 773K for 3 hours.Vacuum,Vol 46,number 8-10,1995, p.953
Hardness8.8 GPaPrepared by rf sputtering method on Si and then ion implanted with Ti,values measured by X-ray diffraction and ultra-low load nanoindentation method, Ti dose=3E+17 per cm2,observed phases=TiN & TiB2.Vacuum,Vol 46,number 8-10,1995, p.953
Hardness21.4 GPaPrepared by rf sputtering method on Si and then ion implanted with Ti,values measured by X-ray diffraction and ultra-low load nanoindentation method,Ti dose=1E+18 per cm2,observed phases=TiN & Ti.Vacuum,Vol 46,number 8-10,1995, p.953
Hardness20.9 GPaPrepared by rf sputtering method on Si and then ion implanted with Ti,values measured by X-ray diffraction and ultra-low load nanoindentation method,Ti dose=1E+18 per cm2,observed phases=TiN & Ti,annealed at 773K for 3 hours.Vacuum,Vol 46,number 8-10,1995, p.953
Hardness14.4 GPaPrepared by rf sputtering method on Si and then ion implanted with Ti,values measured by X-ray diffraction and ultra-low load nanoindentation method,Ti dose=3E+18 per cm2,observed phases= Ti, annealed at 773K for 3 hours.Vacuum,Vol 46,number 8-10,1995, p.953
Hardness21.9 GPaPrepared by rf sputtering method on Si and then ion implanted with Ti,values measured by X-ray diffraction ultra-low load nanoindentation method Ti dose=3E+18 per cm2,observed phases= Ti.Vacuum,Vol 46,number 8-10,1995, p.953
Young's Modulus93 GPaPrepared by rf sputtering method on Si and then ion implanted with Ti,values measured by X-ray diffraction and ultra-low load nanoindentation method,Ti dose=1E+17 per cm2,observed phases=B & TiB2.Vacuum,Vol 46,number 8-10,1995, p.953
Young's Modulus65 GPaprepared by rf sputtering method on Si and then ion implanted with Ti,values measured by X-ray diffraction and ultra-low load noindentation method,Ti dose=1E+17 per cm2, observed phases=B & TiB2,annealed at 773K for 3 hours.Vacuum,Vol 46,number 8-10,1995, p.953
Young's Modulus30 GPaPrepared by rf sputtering method on Si and then ion implanted with Ti,values measured by X-ray diffraction and ultra-low nanoindentation method,Ti dose=3E+17 per cm2,observed phases=TiN & TiB2,annealed at 773K for 3 hours.Vacuum,Vol 46,number 8-10,1995, p.953
Young's Modulus120 GPaPrepared by rf sputtering method on Si and then ion implanted with Ti,values measured by X-ray diffraction and ultra-low load nanoindentation method, Ti dose=3E+17 per cm2,observed phases=TiN & TiB2.Vacuum,Vol 46,number 8-10,1995, p.953
Young's Modulus192 GPaPrepared by rf sputtering method on Si and then ion implanted with Ti,values measured by X-ray diffraction and ultra-low load nanoindentation method,Ti dose=1E+18 per cm2,observed phases=TiN & Ti.Vacuum,Vol 46,number 8-10,1995, p.953
Young's Modulus187 GPaPrepared by rf sputtering method on Si and then ion implanted with Ti,values measured by X-ray diffraction and ultra-low load nanoindentation method,Ti dose=1E+18 per cm2,observed phases=TiN & Ti,annealed at 773K for 3 hours.Vacuum,Vol 46,number 8-10,1995, p.953
Young's Modulus184 GPaPrepared by rf sputtering method on Si and then ion implanted with Ti,values measured by X-ray diffraction and ultra-low load nanoindentation method,Ti dose=3E+18 per cm2,observed phases= Ti, annealed at 773K for 3 hours.Vacuum,Vol 46,number 8-10,1995, p.953
Young's Modulus241 GPaPrepared by rf sputtering method on Si and then ion implanted with Ti,values measured by X-ray diffraction ultra-low load nanoindentation method Ti dose=3E+18 per cm2,observed phases= Ti.Vacuum,Vol 46,number 8-10,1995, p.953
Young's Modulus35 .. 284 GPaObtained from laser induced ultrasonic surface wave method for a thickness of 0.1-0.2 um,choosing an intermediate density.Thin Solid Films 290-291(1996), p.309
Young's Modulus600 GPaCubic,value obtained from laser induced ultrasonic surface wave method,considering average density.Thin solid films 290-291(1996), p.305
Young's Modulus35 GPaHexagonal,value obtained from laser induced ultrasonic surface wave method,considering average density.Thin solid films 290-291(1996), p.306
Young's Modulus600 GPaCubic,value obtained by IBAD technology,depositing on a silicon wafer,film thickness=120nm.Thin Solid Films 290-291(1996), p.310
Young's Modulus35 GPaPurely hexagonal,value obtained by laser induced ultrasonic surface wave method depositing on a silicon wafer,film thickness=120nm.Thin Solid Films 290-291(1996), p.310
Young's Modulus600 GPaPurely cubic,value obtained by laser induced ultra sonic surface wave method,depositing on a silicon wafer,film thickness=120nm. .Thin Solid Films 290-291(1996), p.310
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