A MEMS Clearinghouse® and information portal
for the MEMS and Nanotechnology community
RegisterSign-In
MEMSnet Home About Us What is MEMS? Beginner's Guide Discussion Groups Advertise Here

Material: Carbon Nitride (CNx), film

To purchase MEMS-related materials, supplies, equipment, wafers, etc.,please visit the links section of the MEMSNet site.

Property↑↓Value↑↓Conditions↑↓Reference↑↓
Elastic recovery during unloading0.82Using unbalanced magnetron sputtering system by reactive sputtering of C in N2 discharge.Substrate Si(001),temp=400C, N2 press=10 mTorr,Bias=-57 V,values obtained by using nano-indentation method and calculations from load-displacement curves.Thin Solid Films,246(1994), p.108
Elastic recovery during unloading0.73Using unbalanced magnetron sputtering system by reactive sputtering of C in N2 discharge,substrate Si(001),temp=500C, N2 press=7 mTorr,Bias=-7.5 V,values obtained by using nano indentation method and calculated by load-displacement curves.(sample analysed by RBS method had 21% nitrogen).Thin Solid Films,246(1994), p.108
Elastic recovery during unloading0.74Using unbalanced magnetron sputtering system by reactive sputtering of C in N2 discharge,substrate Si(001),temp=500C, N2 press=9 mTorr,Bias=-7.5 V,values obtained by using nano-indentation method and calculated by load-displacement curves.Thin Solid Films,246(1994), p.108
Elastic recovery during unloading0.65Using unbalanced magnetron sputtering system by reactive sputtering of C in N2 discharge,substrate Si(001),temp=500C, N2 press=8 mTorr,Bias=7.5 V,values obtained by using nano-indentation method and calculated by load-displacement curves.Thin Solid Films,246(1994), p.108
Elastic recovery during unloading0.55Using unbalanced magnetron sputtering system by reactive sputtering of C in N2 discharge,substrate Si(001),temp=150C, N2 press=10 mTorr,Bias=-54 V,values obtained by using nano-indentation method and calculated from load-displacement curves.(sample analysed with RBS had 27% nitrogen).Thin Solid Films,246(1994), p.108
Hardness,load-off213 GPaUsing unbalanced magnetron sputtering system by reactive sputtering of C in N2 discharge.Substrate Si(001),temp=400C, N2 press=10 mTorr,Bias=-57 V,values obtained by using nano-indentation method and calculations from load-displacement curves.Thin Solid Films,246(1994), p.108
Hardness,load-off128 GPaUsing unbalanced magnetron sputtering system by reactive sputtering of C in N2 discharge,substrate Si(001),temp=500C, N2 press=7 mTorr,Bias=-7.5 V,values obtained by using nano indentation method and calculated by load-displacement curves.(sample analysed by RBS method had 21% nitrogen).Thin Solid Films,246(1994), p.108
Hardness,load-off128 GPaUsing unbalanced magnetron sputtering system by reactive sputtering of C in N2 discharge,substrate Si(001),temp=500C, N2 press=9 mTorr,Bias=-7.5 V,values obtained by using nano-indentation method and calculated by load-displacement curves.Thin Solid Films,246(1994), p.108
Hardness,load-off56.7 GPaUsing unbalanced magnetron sputtering system by reactive sputtering of C in N2 discharge,substrate Si(001),temp=500C, N2 press=8 mTorr,Bias=7.5 V,values obtained by using nano-indentation method and calculated by load-displacement curves.Thin Solid Films,246(1994), p.108
Hardness,load-off36.3 GPaUsing unbalanced magnetron sputtering system by reactive sputtering of C in N2 discharge,substrate Si(001),temp=150C, N2 press=10 mTorr,Bias=-54 V,values obtained by using nano-indentation method and calculated from load-displacement curves.(sample analysed with RBS had 27% nitrogen).Thin Solid Films,246(1994), p.108
Hardness,load-on7 GPaUsing unbalanced magnetron sputtering system by reactive sputtering of C in N2 discharge.Substrate Si(001),temp=400C, N2 press=10 mTorr,Bias=-57 V,values obtained by using nano-indentation method and calculations from load-displacement curves.Thin Solid Films,246(1994), p.108
Hardness,load-on9.1 GPaUsing unbalanced magnetron sputtering system by reactive sputtering of C in N2 discharge,substrate Si(001),temp=500C, N2 press=7 mTorr,Bias=-7.5 V,values obtained by using nano indentation method and calculated by load-displacement curves.(sample analysed by RBS method had 21% nitrogen).Thin Solid Films,246(1994), p.108
Hardness,load-on8.5 GPaUsing unbalanced magnetron sputtering system by reactive sputtering of C in N2 discharge,substrate Si(001),temp=500C, N2 press=9 mTorr,Bias=-7.5 V,values obtained by using nano-indentation method and calculated by load-displacement curves.Thin Solid Films,246(1994), p.108
Hardness,load-on7.1 GPaUsing unbalanced magnetron sputtering system by reactive sputtering of C in N2 discharge,substrate Si(001),temp=500C, N2 press=8 mTorr,Bias=7.5 V,values obtained by using nano-indentation method and calculated by load-displacement curves.Thin Solid Films,246(1994), p.108
Hardness,load-on7.5 GPaUsing unbalanced magnetron sputtering system by reactive sputtering of C in N2 discharge,substrate Si(001),temp=150C, N2 press=10 mTorr,Bias=-54 V,values obtained by using nano-indentation method and calculated from load-displacement curves.(sample analysed with RBS had 27% nitrogen).Thin Solid Films,246(1994), p.108
Terms of Use | Contact Us | Search