Material: Platinum (Pt), film

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Property↑↓	Value↑↓	Conditions↑↓	Reference↑↓
Coherently diffracting domains,CDD	4.9 nm	Thick film,150 nm polycrystalline Pt film on Si<100> substrate, deposited by electron beam evaporation method at a rate of 0.1 nm/sec, values obtained by Warren-Averbach method.	Thin Solid Films,275(1996), p.23
Coherently diffracting domains,CDD	4 nm	Thick film,150 nm polycrystalline Pt on Si<100> substrate, deposited by electron beam evaporation method at a rate of 0.7nm/sec,values obtained by Warren-Averbach method.	Thin Solid Films 275(1996), p.23
Coherently diffracting domains,CDD	8.8 nm	Thick film,150 nm polycrystalline Pt on Si<100> substrate, deposited by electron beam evaporation method at a rate of 0.7nm/sec, values obtained by Gauss method.	Thin Solid Films,275(1996), p.23
Coherently diffracting domains,CDD	10 nm	Thick film,150 nm polycrystalline Pt film on Si<100> substrate, deposited by electron beam evaporation method at a rate of 0.4nm/sec, values obtained by Gauss method.	Thin Solid Films,275(1996), p.23
Coherently diffracting domains,CDD	10.9 nm	Thick film,150 nm polycrystalline Pt film on Si<100> substrate,deposited by electron beam evaporation method at a rate of 0.1nm/sec, values obtained by Gauss method.	Thin Solid Films,275(1996), p.23
Microdistortions	0.0029	Thick film,150 nm polycrystalline Pt film on Si<100> substrate, deposited by electron beam evaporation method at a rate of 0.1 nm/sec, values obtained by Warren-Averbach method.	Thin Solid Films,275(1996), p.23
Microdistortions	0.0006	Thick film,150 nm polycrystalline Pt on Si<100> substrate, deposited by electron beam evaporation method at a rate of 0.7nm/sec,values obtained by Warren-Averbach method.	Thin Solid Films 275(1996), p.23
Microdistortions	0.001	Thick film,150 nm polycrystalline Pt on Si<100> substrate, deposited by electron beam evaporation method at a rate of 0.7nm/sec, values obtained by Gauss method.	Thin Solid Films,275(1996), p.23
Microdistortions	0.002	Thick film,150 nm polycrystalline Pt film on Si<100> substrate, deposited by electron beam evaporation method at a rate of 0.4nm/sec, values obtained by Gauss method.	Thin Solid Films,275(1996), p.23
Microdistortions	0.0032	Thick film,150 nm polycrystalline Pt film on Si<100> substrate,deposited by electron beam evaporation method at a rate of 0.1nm/sec, values obtained by Gauss method.	Thin Solid Films,275(1996), p.23
Strain,limiting	0.001	Thin film,used in semiconductor fabrication.	IEEE,Micro Electro Mechanical Systems Workshop,Feb 1990, Napa Vally,California, p.174
Stress,internal	185 .. 275 MPa	Thick film,150 nm polycrystalline Pt film on Si<100> substrate, deposited by electron beam evaporation method at a rate of 0.1 nm/sec, values obtained by X-Ray diffraction analysis.	Thin Solid Films, 275(1996), p.23
Stress,internal	499 .. 673 MPa	Thick film,150 nm polycrystalline Pt film on Si<100> substrate, deposited by electron beam evaporation method at a rate of 0.4 nm/sec, values obtained by X-Ray diffraction analysis.	Thin Solid Films,275(1996), p.23
Stress,internal	739 .. 955 MPa	Thick film,150 nm polycrystalline Pt film on Si<100> substrate, deposited by electron beam evaporation method at a rate of 0.7 nm/sec, values obtained by X-Ray diffraction analysis.	Thin Solid Films,275(1996), p.23
Stress-free lattice parameter	0.3919 .. 0.3921 nm	Thick film,150 nm polycrystalline Pt film on Si<100> substrate, deposited by electron beam evaporation method at a rate of 0.1 nm/sec, values obtained by X-Ray diffraction analysis.	Thin Solid Films, 275(1996), p.23
Stress-free lattice parameter	0.3919 .. 0.3921 nm	Thick film,150 nm polycrystalline Pt film on Si<100> substrate, deposited by electron beam evaporation method at a rate of 0.4 nm/sec, values obtained by X-Ray diffraction analysis.	Thin Solid Films,275(1996), p.23
Stress-free lattice parameter	0.392 .. 0.3922 nm	Thick film,150 nm polycrystalline Pt film on Si<100> substrate, deposited by electron beam evaporation method at a rate of 0.7 nm/sec, values obtained by X-Ray diffraction analysis.	Thin Solid Films,275(1996), p.23
Young's Modulus	170 GPa	Thin film,used in semiconductor fabrication.	IEEE,Micro Electro Mechanical Systems Workshop,Feb 1990, Napa Vally,California, p.174