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Material: Silicon Carbide (SiC), film

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Property↑↓Value↑↓Conditions↑↓Reference↑↓
Hardness,Knoop(KH)19.72 GPaPolycrystalline film grown on Si<100> substrate by activated reactive evaporation(ARE)process,C2H2 press=1 mTorr,T=700C,V(ARE)=100 V,V(sub)=0,observed phase=Beta-SiC & small amount of alpha-SiC,load=0.981N.Thin Solid Films,253(1994), p.213
Hardness,Knoop(KH)17.85 GPaPolycrystalline film grown on Si<100> substrate by activated reactive evaporation(ARE)process,C2H2 press=3 mTorr,T=700C,V(ARE)=100 V,V(sub)=0,observed phase=Beta-SiC, load=0.981N.Thin Solid Films,253(1994), p.213
Hardness,Knoop(KH)17.17 GPaPolycrystalline film grown on Si<100>substrate by activated reactive evaporation(ARE)process,C2H2 press=5 mTorr,T=700C,V(ARE)=100 V,V(sub)=0,observed phase=alpha-SiC, load=0.981N.Thin Solid Films,253(1994), p.213
Hardness,Knoop(KH)4.32 GPaPolycrystalline film grown on Si<100> substrate by activated reactive evaporation(ARE)process,C2H2 press=3 mTorr,T=300C,V(ARE)=100,V(sub)=0,observed phase=alpha-SiC & amorphous SiC,load=0.981N.Thin Solid Films,253(1994), p.213
Hardness,Knoop(KH)11.18 GPaPolycrystalline film grown on Si<100> substrate by activated reactive evaporation(ARE)process,C2H2 press=3 mTorr,T=500C ,V(ARE)=100,V(sub)=0,observed phase=alpha-SiC, load=0.981N.Thin Solid Films,253(1994), p.213
Hardness,Knoop(KH)17.56 GPaPolycrystalline film grown on Si<100>substrate by activated reactive evaporation(ARE)process,C2H2 press=3 mTorr,T=600C,V(ARE)=100,V(sub)=0,observed phase=Beta-SiC & alpha-SiC,load=0.981N.Thin Solid Films,253(1994), p.213
Hardness,Knoop(KH)17.46 GPaPolycrystalline film,grown on Si<100>substrate by activated reactive evaporation(ARE)process,C2H2 press= 3 mTorr,T=700C,V(ARE)=60V,V(sub)=0,observed phase=Beta-SiC & alpha-SiC,load=0.981 N.Thin Solid Films,253(1994), p.213
Hardness,Knoop(KH)18.54 GPaPolycrystalline film,grown on Si<100>substrate by activated reactive evaporation(ARE)process,C2H2 press=3 mTorr,T=700C,V(ARE)=150 V,V(sub)=0,observed phase=Beta-SiC, load=0.981 N.Thin Solid Films,253(1994), p.213
Hardness,Knoop(KH)17.66 GPaPolycrystalline film grown on Si<100> substrate by activated reactive evaporation (ARE)process,C2H2 press=3 mTorr,T=700C,V(ARE)=170 V,V(sub)=0,observed phase=Beta-SiC, and a small amount of alpha-SiC load=0.981 N.Thin Solid Films,253(1994), p.213
Hardness,Knoop(KH)20.21 GPaPolycrystalline film,grown on Si<100> substrate by activated reactive evaporation (ARE)process, C2H2 press=3 mTorr,T=700C ,V(ARE)=150V,V(sub)=-50V observed phase=Beta-SiC,load=0.981 N.Thin Solid Films,253(1994), p.213
Hardness,Knoop(KH)19.23 GPaPolycrystalline film grown on Si<100> substrate by activated reactive evaporation(ARE)process,C2H2 press=3 mTorr,T=700C ,V(ARE)=150V,V(sub)=-100V,observed phase=Beta-SiC &a small amount of alpha-SiC ,load=0.981N.Thin Solid Films,253(1994), p.213
Hardness,Knoop(KH)15.99 GPaPolycrystalline film grown on Si<100> substrate by activated reactive evaporation(ARE)process,C2H2 press=3 mTorr,T=700C ,V(ARE)=150V,V(sub)=-150V,observed phase=Beta-SiC & alpha-SiC ,load=0.981N.Thin Solid Films,253(1994), p.213
Hardness,Knoop(KH)13.15 GPaPolycrystalline film grown on Si<100> substrate by activated reactive evaporation(ARE)process,C2H2 press=3 mTorr,T=700C ,V(ARE)=150V,V(sub)=-200V,observed phase=Beta-SiC & alpha-SiC ,load=0.981 N.Thin Solid Films,253(1994), p.213
Hardness,Knoop(KH) or Vickers(VH)2853 .. 4483 kg/mm/mmCeramic,cubic,CVDCRC Materials Science and Engineering Handbook, p.471
Hardness,Vickers(VH)33.26 GPaPolycrystalline film grown on Si<100> substrate by activated reactive evaporation(ARE)process,C2H2 press=1 mTorr,T=700C,V(ARE)=100 V,V(sub)=0,observed phase=Beta-SiC & small amount of alpha-SiC,load=0.245N.Thin Solid Films,253(1994), p.213
Hardness,Vickers(VH)27.1 GPaPolycrystalline film grown on Si<100> substrate by activated reactive evaporation(ARE)process,C2H2 press=3 mTorr,T=700C,V(ARE)=100 V,V(sub)=0,observed phase=Beta-SiC,, load=0.245 N.Thin Solid Films,253(1994), p.213
Hardness,Vickers(VH)22.46 GPaPolycrystalline film grown on Si<100> substrate by activated reactive evaporation(ARE)process,C2H2 press=5 mTorr,T=700C,V(ARE)=100 V,V(sub)=0,observed phase=alpha-SiC, load=0.245 N.Thin Solid Films,253(1994), p.213
Hardness,Vickers(VH)12.65 GPaPolycrystalline film grown on Si<100> substrate by activated reactive evaporation(ARE)process,C2H2 press=3 mTorr,T=500C,V(ARE)=100,V(sub)=0,observed phase=alpha-SiC, load=0.245N.Thin Solid Films,253(1994), p.213
Hardness,Vickers(VH)25.8 GPaPolycrystalline film grown on Si,<100> substrate by activated reactive evaporation(ARE)process,C2H2 press=3 mTorr,T=600C ,V(ARE)=100,V(sub)=0,observed phase=Beta-SiC & alpha-SiC,load=0.245 N.Thin Solid Films,253(1994), p.213
Hardness,Vickers(VH)23.54 GPaPolycrystalline film grown on Si<100> substrate by activated reactive evaporation(ARE)process,C2H2 press=3 mTorr,T=700C ,V(ARE)=60V ,V(sub)=0,observed phase=Beta-SiC & alpha-SiC,load=0.245 N.Thin Solid Films,253(1994), p.213
Hardness,Vickers(VH)28.45 GPaPolycrystalline film,grown on Si<100> substrate by activated reactive evaporation(ARE)process,C2H2 press=3 mTorr,T=700C,V(ARE)=150 V ,V(sub)=0,observed phase=Beta-SiC, load=0.245 N.Thin Solid Films,253(1994), p.213
Hardness,Vickers(VH)34.14 GPaPolycrystalline film grown on Si<100> substrate by activated reactive evaporation (ARE)process,C2H2 press=3 mTorr,T=700C ,V(ARE)=150V,V(sub)=-100V,observed phase=Beta-SiC & a small amount of alpha-SiC ,load=0.245 N.Thin Solid Films,253(1994), p.213
Hardness,Vickers(VH)22.66 GPaPolycrystalline film grown on Si<100>substrate by activated reactive evaporation(ARE)process,C2H2 press=3 mTorr,T=700C,V(ARE)=150V,V(sub)=-150V,observed phase=Beta-SiC & alpha-SiC ,load=0.245N.Thin Solid Films,253(1994), p.213
Hardness,Vickers(VH)17.17 GPaPolycrystalline film grown on Si<100> substrate by activated reactive evaporation(ARE)process,C2H2 press=3 mTorr,T=700C,V(ARE)=150V,V(sub)=-200V,observed phase=Beta-SiC & alpha-SiC ,load=0.245N.Thin Solid Films,253(1994), p.213
Refractive index1.9 .. 2.4Alpha(SiC)PECVD film,SiH4/CH4 flow ratio range=0.75-1.1,gas pressure= 300mTorr,RF power=150W,wavelength not given.IEEE Micro Electro Mechanical Systems Workshop,Feb 1993,Florida, p.246
Stress,residual30 .. 64 MPaCompresive stress,alpha(SiC)PECVD film,value detemined by wafer curvature measurements,film deposition rate is 45-48 A/min.IEEE Micro Electro Mechanical Systems Workshop,Feb 1993,Florida, p.245
Thermal conductivity120.8 W/m/KCubic,CVD,at 127 C.CRC Materials Science and Engineering Handbook, p.278
Thermal conductivity20.84 .. 33.44 W/m/KCubic,CVD,at 600 C.CRC Materials Science and Engineering Handbook, p.279
Thermal conductivity25.5 W/m/KCubic,CVD,at 800 C.CRC Materials Science and Engineering Handbook, p.279
Thermal conductivity21.32 W/m/KCubic,CVD,at 1000 C.CRC Materials Science and Engineering Handbook, p.279
Thermal conductivity2.47 W/m/KCubic,CVD,at 1250 C.CRC Materials Science and Engineering Handbook, p.279
Thermal conductivity34.57 W/m/KCubic,CVD,at 1327 C.CRC Materials Science and Engineering Handbook, p.279
Thermal conductivity1.34 W/m/KCubic,CVD,at 1530 C.CRC Materials Science and Engineering Handbook, p.279
Young's Modulus415.17 .. 440.71 GPaCeramic,cubic,CVD , at room temperatureCRC Materials Science and Engineering Handbook, p.507
Young's Modulus100 .. 150 GPaObtained from laser induced ultrasonic surface wave method for a thickness of 0.2-0.3 um,choosing an intermediate density.Thin Solid Films 290-291(1996), p.309
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