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Material: Silicon Dioxide (SiO2), film

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Property↑↓Value↑↓Conditions↑↓Reference↑↓
Biaxial Modulus43 .. 77 GPaUsed in microfabricated flow chambers for optical measurements, value obtained by indirect measurements of composite Si3N4/SiO2 windows using load deflection measurements,thickness=0.5 um, Wet,temp=950 CIEEE Micro Electro Mechanical Systems Workshop,Feb 1993,Florida , p.223
Coefficient of static friction0.2Used as a mover,min voltage to remove the mover=1320 V, bottom of the mover is glass plate,film condition=1um & deposited by CVD method on silicon wafer.IEEE Micro Electro Mechanical Systems Workshop,Jan-Feb 1991, Nara,Japan, p.151
Coefficient of static friction0.31Used as a mover,min voltage to remove the mover=1650 V, bottom of the mover is glass plate,film condition: 0.08 um & deposited by Sol-gel method on silicon wafer.IEEE Micro Electro Mechanical Systems Workshop,Jan-Feb 1991, Nara,Japan, p.151
Coefficient of static friction0.18Used as a mover,min voltage to move the mover=1250 V,bottom of the mover is glass plate,film condition:1.4698 um deposited by vacuum-evaporation method on glass substrate.IEEE Micro Electro Mechanical Systems Workshop,Jan-Feb 1991, Nara,Japan, p.151
Coefficient of static friction0.33Used as a mover,min voltage to remove the mover=1475 V,bottom of the mover is Silicon substrate,film condition:0.080 um & deposited by Sol-gel method on silicon wafer.IEEE Micro Electro Mechanical Systems Workshop,Jan-Feb 1991, Nara,Japan, p.151
Coefficient of static friction0.38Used as a mover,min voltage to move the mover=1575 V, bottom of the mover is Silicon substrate,film conditon:1 um & deposited by CVD method on silicon wafer.IEEE Micro Electro Mechanical Systems Workshop,Jan-Feb 1991, Nara,Japan, p.151
Coefficient of static friction0.09Used as a mover,min voltage to move the mover=775 V,bottom of the mover is Silicon substrate,film condition:1.4698 um deposited by vacuum-evaporation method on glass substrate.IEEE Micro Electro Mechanical Systems Workshop,Jan-Feb 1991, Nara,Japan, p.151
Density2200 kg/m^3Thermal-dry grown film,thickness=0.325 um, values are calculated using electrostatically deflectable me mbrans and Cr for metallization(thickness of 0.015um ),assuming density of 7200kg/m/m/m & Young's Modulus of 180 GPa for Cr films.The accuracy of Young's Modulus is +- 20%.IEEE Transactions on electron devices,Vol.ED25,No.10,Oct1978, p.1249
Density2200 kg/m^3Sputtered grown film,thickness=0.4 um, values are calculated using electrostatically deflectable me mbrans and Cr for metallization(thickness of 0.01 um) ,assuming density of 7200kg/m/m/m & Young's Modulus of 180 GPa for Cr films.The accuracy of Young's Modulus is +- 20%.IEEE Transactions on electron devices,Vol.ED25,No.10,Oct1978, p.1249
Density2200 kg/m^3Thermal-wet grown film,thickness=0.425 um, values are calculated using electrostatically deflectable me mbrans and Cr for metallization(thickness of 0.015um ),assuming density of 7200kg/m/m/m & Young's Modulus of 180 GPa for Cromium.IEEE Transactions on electron devices,Vol.ED25,No.10,Oct1978, p.1249
Density2200 kg/m^3Thermal-wet grown,thickness=0.425um,values are calculated using electrostatically deflectable membrans and Cr for metallization(thickness of 0.015um),assuming density of 7200kg/m/m/m & Young's modulus of 180 GPa for Cr films.IEEE Transactions on electron devices,Vol.ED25,No.10,Oct1978, p.1249
Friction coefficient,micro0.01PECVD oxide coated Si<111>,using nanotribology method(AFM/FFM).IEEE Micro Electro Mechanical Systems Workshop,SanDiego, California,Feb 1996, p.97
Friction coefficient,micro0.04Dry oxidized Si<111>,using nonotribology method(AFM/FFM).IEEE Micro Electro Mechanical Systems Workshop,SanDiego, California,Feb 1996, p.97
Friction coefficient,micro0.04Wet oxidized Si<111>,using nanotribology techniques(AFM/FFM).IEEE Micro Electro Mechanical Systems Workshop,SanDiego, California,Feb 1996, p.97
Hardness,nanoindentation(at 100uN)18 GPaPECVD oxide coated Si<111>,using nanotribology method(AFM/FFM).IEEE Micro Electro Mechanical Systems Workshop,SanDiego, California,Feb 1996, p.97
Hardness,nanoindentation(at 100uN)17 GPaDry oxidized Si<111>,using nonotribology method(AFM/FFM).IEEE Micro Electro Mechanical Systems Workshop,SanDiego, California,Feb 1996, p.97
Hardness,nanoindentation(at 100uN)14.4 GPaWet oxidized Si<111>,using nanotribology techniques(AFM/FFM).IEEE Micro Electro Mechanical Systems Workshop,SanDiego, California,Feb 1996, p.97
Poisson's Ratio0.17Value obtained by micro-indentation test for thermally grown SiO2 film on a silicon<111> wafer.Thin Solid Films,283(1996), p.15
Roughness(Rms)1.5PECVD oxide coated Si<111>,using nanotribology method(AFM/FFM).IEEE Micro Electro Mechanical Systems Workshop,SanDiego, California,Feb 1996, p.97
Roughness(Rms)0.11Dry oxidized Si<111>,using nonotribology method(AFM/FFM).IEEE Micro Electro Mechanical Systems Workshop,SanDiego, California,Feb 1996, p.97
Roughness(Rms)0.25Wet oxidized Si<111>,using nanotribology techniques(AFM/FFM).IEEE Micro Electro Mechanical Systems Workshop,SanDiego, California,Feb 1996, p.97
Scratch depth,micro(at 40uN)8 nmPECVD oxide coated Si<111>,using nanotribology method(AFM/FFM).IEEE Micro Electro Mechanical Systems Workshop,SanDiego, California,Feb 1996, p.97
Scratch depth,micro(at 40uN)16 nmDry oxidized Si<111>,using nonotribology method(AFM/FFM).IEEE Micro Electro Mechanical Systems Workshop,SanDiego, California,Feb 1996, p.97
Scratch depth,micro(at 40uN)17 nmWet oxidized Si<111>,using nanotribology techniques(AFM/FFM).IEEE Micro Electro Mechanical Systems Workshop,SanDiego, California,Feb 1996, p.97
Static frictional force(max)0.000709 NUsed as a mover,min voltage to remove the mover=1320 V, bottom of the mover is glass plate,film condition=1um & deposited by CVD method on silicon wafer.IEEE Micro Electro Mechanical Systems Workshop,Jan-Feb 1991, Nara,Japan, p.151
Static frictional force(max)0.001107 NUsed as a mover,min voltage to remove the mover=1650 V, bottom of the mover is glass plate,film condition: 0.08 um & deposited by Sol-gel method on silicon wafer.IEEE Micro Electro Mechanical Systems Workshop,Jan-Feb 1991, Nara,Japan, p.151
Static frictional force(max)0.000635 NUsed as a mover,min voltage to move the mover=1250 V,bottom of the mover is glass plate,film condition:1.4698 um deposited by vacuum-evaporation method on glass substrate.IEEE Micro Electro Mechanical Systems Workshop,Jan-Feb 1991, Nara,Japan, p.151
Static frictional force(max)0.000885 NUsed as a mover,min voltage to remove the mover=1475 V,bottom of the mover is Silicon substrate,film condition:0.080 um & deposited by Sol-gel method on silicon wafer.IEEE Micro Electro Mechanical Systems Workshop,Jan-Feb 1991, Nara,Japan, p.151
Static frictional force(max)0.001009 NUsed as a mover,min voltage to move the mover=1575 V, bottom of the mover is Silicon substrate,film conditon:1 um & deposited by CVD method on silicon wafer.IEEE Micro Electro Mechanical Systems Workshop,Jan-Feb 1991, Nara,Japan, p.151
Static frictional force(max)0.000244 NUsed as a mover,min voltage to move the mover=775 V,bottom of the mover is Silicon substrate,film condition:1.4698 um deposited by vacuum-evaporation method on glass substrate.IEEE Micro Electro Mechanical Systems Workshop,Jan-Feb 1991, Nara,Japan, p.151
Strain,built-in0.0047Ideal memory bridge,area=500 um2,length=30 um,width=3 um, thickness=300 A,switching voltage==11 V.IEEE Micro Electro Mechanical Systems Workshop,Feb 1990,Napa Vally, California, p.175
Strain,limiting0.112Ideal memory bridge,area=500 um2,length=30 um,width=3 um, thickness=300 A,switching voltage==11 V.IEEE Micro Electro Mechanical Systems Workshop,Feb 1990,Napa Vally, California, p.175
Strain,max.local0.0007Ideal memory bridge,area=500 um2,length=30 um,width=3 um, thickness=300 A,switching voltage==11 V.IEEE Micro Electro Mechanical Systems Workshop,Feb 1990,Napa Vally, California, p.175
Stress-320 MPaLPCVD,temp=920 C,Nf=1.46,BHF etch rate=1570(A/min),EDP etch rate=300(A/hr)Solid-State Sensors and Actuators Workshop,Hilton Head Island, South Carolina,June 1994, p.31
Stress,residual-0.275 .. -0.225 GPaUsed in microfabricated flow chambers for optical measurements, value obtained by indirect measurements of composite Si3N4/SiO2 windows using load deflection measurements,thickness=0.5 um, Wet,temp=950 CIEEE Micro Electro Mechanical Systems Workshop,Feb 1993,Florida , p.223
Thermal conductivity1.1 W/m/KGlass at temp=200 C.CRC Materials Science and Engineering Handbook, p.289
Wear depth,micro(at 40uN)5 nmPECVD oxide coated Si<111>,using nanotribology method(AFM/FFM).IEEE Micro Electro Mechanical Systems Workshop,SanDiego, California,Feb 1996, p.97
Wear depth,micro(at 40uN)14 nmDry oxidized Si<111>,using nonotribology method(AFM/FFM).IEEE Micro Electro Mechanical Systems Workshop,SanDiego, California,Feb 1996, p.97
Wear depth,micro(at 40uN)18 nmWet oxidized Si<111>,using nanotribology techniques(AFM/FFM).IEEE Micro Electro Mechanical Systems Workshop,SanDiego, California,Feb 1996, p.97
Young's Modulus70 GPaValue obtained by micro-indentation test for thermally grown SiO2 film on a silicon<111> wafer.Thin Solid Films,283(1996), p.15
Young's Modulus74 GPaUsed for electrothermal BimorphsIEEE Micro Electro Mechanical Systems Workshop,Feb 1993, Florida, p.25
Young's Modulus75 GPaThin film,used in semiconductor fabrication.IEEE,Micro Electro Mechanical Systems Workshop,Feb 1990, Napa Vally,California, p.174
Young's Modulus75 GPaIdeal memory bridge,area=500 um2,length=30 um,width=3 um, thickness=300 A,switching voltage==11 V.IEEE Micro Electro Mechanical Systems Workshop,Feb 1990,Napa Vally, California, p.175
Young's Modulus69 GPaThermal-dry grown film,thickness=0.325 um, values are calculated using electrostatically deflectable me mbrans and Cr for metallization(thickness of 0.015um ),assuming density of 7200kg/m/m/m & Young's Modulus of 180 GPa for Cr films.The accuracy of Young's Modulus is +- 20%.IEEE Transactions on electron devices,Vol.ED25,No.10,Oct1978, p.1249
Young's Modulus92 GPaSputtered grown film,thickness=0.4 um, values are calculated using electrostatically deflectable me mbrans and Cr for metallization(thickness of 0.01 um) ,assuming density of 7200kg/m/m/m & Young's Modulus of 180 GPa for Cr films.The accuracy of Young's Modulus is +- 20%.IEEE Transactions on electron devices,Vol.ED25,No.10,Oct1978, p.1249
Young's Modulus57 GPaThermal-wet grown film,thickness=0.425 um, values are calculated using electrostatically deflectable me mbrans and Cr for metallization(thickness of 0.015um ),assuming density of 7200kg/m/m/m & Young's Modulus of 180 GPa for Cromium.IEEE Transactions on electron devices,Vol.ED25,No.10,Oct1978, p.1249
Young's Modulus46 .. 68 GPaThermal-wet grown,thickness=0.425um,values are calculated using electrostatically deflectable membrans and Cr for metallization(thickness of 0.015um),assuming density of 7200kg/m/m/m & Young's modulus of 180 GPa for Cr films.IEEE Transactions on electron devices,Vol.ED25,No.10,Oct1978, p.1249
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