Used as a mover,min voltage to remove the mover=1150 V, bottom of the mover is glass plate,film condition=0.242-0.297um & deposited by CVD method on silicon wafer.
IEEE Micro Electro Mechanical Systems Workshop,Jan-Feb 1991, Nara,Japan, p.151
Coefficient of static friction
0.32
Used as a mover,min voltage to remove the mover=1450 V,bottom of the mover is Silicon substrate,film condition:0.242-0.297 um & deposited by CVD method on silicon wafer.
IEEE Micro Electro Mechanical Systems Workshop,Jan-Feb 1991, Nara,Japan, p.151
Static frictional force(max)
0.000538 N
Used as a mover,min voltage to remove the mover=1150 V, bottom of the mover is glass plate,film condition=0.242-0.297um & deposited by CVD method on silicon wafer.
IEEE Micro Electro Mechanical Systems Workshop,Jan-Feb 1991, Nara,Japan, p.151
Static frictional force(max)
0.000855 N
Used as a mover,min voltage to remove the mover=1450 V,bottom of the mover is Silicon substrate,film condition:0.242-0.297 um & deposited by CVD method on silicon wafer.
IEEE Micro Electro Mechanical Systems Workshop,Jan-Feb 1991, Nara,Japan, p.151