Material: Silicon Nitride (SixNy), film

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Property↑↓	Value↑↓	Conditions↑↓	Reference↑↓
Density	2843 .. 2887 kg/m^3	LPCVD silicon rich film,thickness of 0.54um, prepared as microcantilevers using standard silicon micromachining techniques,using resonance method with laser-beam or loud-speaker or piezotransducer exitation.Density is determined gravimetrically.	Sensors and Actuators A,35(1992), p.153-159
Stress	-100 MPa	PECVD ,temp=350 C,Nf=1.89,BHF etch rate=280(A/min),EDP etch rate=550(A/hr)	Solid-State Sensors and Actuators Workshop,Hilton Head Island, South Carolina,June 1994, p.31
Young's Modulus	85 .. 105 GPa	LPCVD silicon rich film,thickness of 0.54um, prepared as microcantilevers using standard silicon micromachining techniques,using resonance method with laser-beam or loud-speaker or piezotransducer exitation.Density is determined gravimetrically.	Sensors and Actuators A,35(1992), p.153-159