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Material: Silicon (Si), bulk

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Property↑↓Value↑↓Conditions↑↓Reference↑↓
Coefficient of static friction0.16Wafer,used as a mover,min voltage to remove the mover=1176 V, bottom of the mover is glass plateIEEE Micro Electro Mechanical Systems Workshop,Jan-Feb 1991, Nara,Japan, p.151
Coefficient of static friction0.38Wafer,used as a mover,min voltage to move the mover=1575 V, bottom of the mover is Silicon substrate,thickness=0.5 mm.IEEE Micro Electro Mechanical Systems Workshop,Jan-Feb 1991, Nara,Japan, p.151
Coordination number4Silicon<111>,crystalline,undoped polished, obtained by SAW technique,using the ns Nd:YAG at 355 nm for launching and the probe beam deflection arrangement for detecting SAW pulses.Applied Surface Science,106(1996), p.433
Density2330 kg/m^3Solid DensityCRC Materials Science and Engineering Handbook, p.46
Density2330 kg/m^3Silicon<111>,crystalline,undoped polished, obtained by SAW technique,using the ns Nd:YAG at 355 nm for launching and the probe beam deflection arrangement for detecting SAW pulses.Applied Surface Science,106(1996), p.433
Elastic recovery during unloading0.56Si<001> substrate,uncoated,using nanoindentation method and load displacement curves for calculation.Thin Solid Films,246(1994), p.108
Friction coefficient0.05Undoped silicon,at the begining of scratching & from an abrupt increase in friction during scratching, width of scratch(1.25um) at about 17-20 mN normal load(measured from SEM images),critical load=10 mN.J.Mater.Res,Vol.12,No.1,Jan 1997, p.59
Friction coefficient0.25P+type silicon<100>,at the begining of scratching & from an abrupt increase in friction during scratching, width of scratch(1.75 um) at about 17-20 mN normal load(measured from SEM images),critical load=7 mN.J.Mater.Res,Vol.12,No.1,Jan 1997, p.59
Friction coefficient0.45 .. 0.6P+type silicon<100> ,at the end of scratching & from an abrupt increase in friction during scratching, width of scratch(1.75 um) at about 17-20 mN normal load(measured from SEM images),critical load=7 mN.J.Mater.Res,Vol.12,No.1,Jan 1997, p.59
Friction coefficient0.45Undoped silicon ,at the end of scratching & from an abrupt increase in friction during scratching, width of scratch(1.25 um) at about 17-20 mN normal load(measured from SEM images),critical load=10 mN.J.Mater.Res,Vol.12,No.1,Jan 1997, p.59
Friction coefficient0.03Single crystal,orientation <111>,scan size=500X500 nm2,using nanotribology studies(AFM/FFM).IEEE Micro Electro Mechanical Systems Workshop,SanDiego, California, Feb 1996, p.97
Friction coefficient,final0.11Single crystal silicon<100>,undoped,sliding against a spherical diamond tip (radius=20um)at 10 mN normal load, 7.0 mmstroke length,0.1 Hz frequency,and 1.0 mm/sec average linear speed for a sliding distance of 4m under an ambient temperature of about 22+-1 C and a relative humidity of about 45+-5% RH.J.Mater.Res,Vol.12,No.1,Jan 1997, p.60
Friction coefficient,final0.11Single crystal silicon<100>,p+type ,sliding against a spherical diamond tip (radius=20um)at 10 mN normal load, 7.0 mmstroke length,0.1 Hz frequency,and 1.0 mm/sec average linear speed for a sliding distance of 4m under an ambient temperature of about 22+-1 C and a relative humidity of about 45+-5% RH.J.Mater.Res,Vol.12,No.1,Jan 1997, p.60
Friction coefficient,final0.65Single crystal silicon<100>,p+type, sliding against a single-crystal sapphire ball(diameter=3mm)7.0 mm stroke length,0.1 Hz frequency,and 1.0 mm/sec average linear speed for a sliding distance of 4m under an ambient temperature of about 22+-1 C and a relative humidity of about 45+-5% RH.J.Mater.Res,Vol.12,No.1,Jan 1997, p.60
Friction coefficient,final0.33Single crystal silicon<100>,undoped, sliding against a single-crystal sapphire ball(diameter=3mm)7.0 mm stroke length,0.1 Hz frequency,and 1.0 mm/sec average linear speed for a sliding distance of 4m under an ambient temperature of about 22+-1 C and a relative humidity of about 45+-5% RH.J.Mater.Res,Vol.12,No.1,Jan 1997, p.60
Friction coefficient,initial0.11Single crystal silicon<100>,p+type,sliding against a spherical diamond tip (tip radius, 20 um) at 10 mN normal load, 7.0 mm stroke length, 0.1 Hz frequency,and 1.0 mm/sec average linear speed for a sliding distance of 4 m under an ambient temperature of 22 +-1 deg C and a relative humidity of about 45 +-5% RH.J.Mater.Res,Vol.12,No.1,Jan 1997, p.60
Friction coefficient,initial0.09Single crystal silicon<100>,undoped,sliding against a spherical diamond tip (tip radius,20um)at 10 mN normal load, 7.0 mm stroke length, 0.1 Hz frequency,and 1.0 mm/sec average linear speed for a sliding distance of 4 m under an ambient temperature of 22 +-1 deg C and a relative humidity of about 45 +-5% RH.J.Mater.Res,Vol.12,No.1,Jan 1997, p.60
Friction coefficient,initial0.37Single crystal silicon<100>,undoped,sliding against a single-crystal sapphire ball(diameter,3mm) at 10 mN normal load,7.0 mmstroke length,0.1 Hz frequency,and 1.0 mm/sec average linear speed for a sliding distance of 4m under an ambient temperature of about 22+-1 C and a relative humidity of about 45+-5% RH.J.Mater.Res,Vol.12,No.1,Jan 1997, p.60
Friction coefficient,initial0.69Single crystal silicon<100>,p+type,sliding against a single-crystal sapphire ball(diameter,3mm) at 10 mN normal load,7.0 mmstroke length,0.1 Hz frequency,and 1.0 mm/sec average linear speed for a sliding distance of 4m under an ambient temperature of about 22+-1 C and a relative humidity of about 45+-5% RH.J.Mater.Res,Vol.12,No.1,Jan 1997, p.60
Friction coefficient,micro0.04Single crystal<110>,scan size=500X500 nm2,using nanotribology studies(AFM/FFM).IEEE Micro Electro Mechanical Systems Workshop,SanDiego, California,Feb 1996, p.97
Friction coefficient,micro0.03Single crystal<100>,scan size=500X500 nm2,using nanotribology studies(AFM/FFM).IEEE Micro Electro Mechanical Systems Workshop,SanDiego, California,Feb 1996, p.97
Friction coefficient,micro0.02C+ implanted Si<111>IEEE Micro Electro Mechanical Systems Workshop,SanDiego, California,Feb 1996, p.97
Hardness13 GPaSilicon<100>,single crystal,undoped obtained by nano indentation at a load of 0.2mN with indentation depth at peak load 24nm.J.mater.Res,Vol.12,No.1,Jan1997, p.59
Hardness11.9 GPaSilicon<100>,single crystal,undoped,values obtained by nano indentation at a load of 15 mN with indentation depth at peak load 267 nm.J.mater.Res,Vol. 12,No.1,Jan1997, p.59
Hardness5.1 GPaSilicon<100>,single crystal,P+type(boron doped),values obtained by nano indentation at a load of 0.2 mN with indentation depth at peak load 44 nm.J.mater.Res,Vol.12,No.1,Jan1997, p.59
Hardness8.7 GPaSilicon<100>,single crystal,P+type(boron doped),values obtained by nano indentation at a load of 15 mN with indentation depth at peak load 318 nm.J.mater.Res,Vol.12,No.1,Jan1997, p.59
Hardness(at 100uN)11.7 GPaSingle crystal,orientation <111>,scan size=500X500 nm2,using nanotribology studies(AFM/FFM).IEEE Micro Electro Mechanical Systems Workshop,SanDiego, California, Feb 1996, p.97
Hardness,load-off36.3 GPaSi<001> substrate,uncoated,using nanoindentation method and load displacement curves for calculation.Thin Solid Films,246(1994), p.108
Hardness,load-on7.1 GPaSi<001> substrate,uncoated,using nanoindentation method and load displacement curves for calculation.Thin Solid Films,246(1994), p.108
Hardness,nanoindentation(at 100uN)18.6 GPaC+ implanted Si<111>IEEE Micro Electro Mechanical Systems Workshop,SanDiego, California,Feb 1996, p.97
Hydrogen content0Silicon<111>,crystalline,undoped polished, obtained by SAW technique,using the ns Nd:YAG at 355 nm for launching and the probe beam deflection arrangement for detecting SAW pulses.Applied Surface Science,106(1996), p.433
Poisson's Ratio0.22Silicon substrate,isotropic & linearly thermoelastic.Mechanics of Materials,23(1996), p.314
Poisson's Ratio0.27Silicon<111>,crystalline,undoped polished, obtained by SAW technique,using the ns Nd:YAG at 355 nm for launching and the probe beam deflection arrangement for detecting SAW pulses.Applied Surface Science,106(1996), p.433
Poisson's Ratio0.278Material property used in the finite element computations of ultra microhardness indentation of thin films,both coating and substrate are assumed to be homogenous and elastic/plastic.Thin solid films 290-291(1996), p.363
Roughness (RMS)0.08 nmUndoped,single crystal,measured using AFM at a scan size of 1 um x 1 um.J. Mater. Res. Vol. 12 No. 1, Jan 1997, p.60
Roughness(Rms)0.23 nmSingle crystal silicon<100>,p+type(boron doped), value measured using AFM at a scan size of 1 um x 1 um.J. Mater. Res., Vol. 12 No. 1, Jan 1997, p.60
Roughness(Rms)0.11Single crystal,orientation <111>,scan size=500X500 nm2,using nanotribology studies(AFM/FFM).IEEE Micro Electro Mechanical Systems Workshop,SanDiego, California, Feb 1996, p.97
Roughness(Rms)0.09Single crystal<110>,scan size=500X500 nm2,using nanotribology studies(AFM/FFM).IEEE Micro Electro Mechanical Systems Workshop,SanDiego, California,Feb 1996, p.97
Roughness(Rms)0.12Single crystal<100>,scan size=500X500 nm2,using nanotribology studies(AFM/FFM).IEEE Micro Electro Mechanical Systems Workshop,SanDiego, California,Feb 1996, p.97
Roughness(Rms)0.33C+ implanted Si<111>IEEE Micro Electro Mechanical Systems Workshop,SanDiego, California,Feb 1996, p.97
Scratch depth(at 40uN)20 nmSingle crystal,orientation <111>,scan size=500X500 nm2,using nanotribology studies(AFM/FFM).IEEE Micro Electro Mechanical Systems Workshop,SanDiego, California, Feb 1996, p.97
Scratch depth,micro(at 40uN)20 nmSingle crystal<110>,scan size=500X500 nm2,using nanotribology studies(AFM/FFM).IEEE Micro Electro Mechanical Systems Workshop,SanDiego, California,Feb 1996, p.97
Scratch depth,micro(at 40uN)25 nmSingle crystal<100>,scan size=500X500 nm2,using nanotribology studies(AFM/FFM).IEEE Micro Electro Mechanical Systems Workshop,SanDiego, California,Feb 1996, p.97
Scratch depth,micro(at 40uN)20 nmC+ implanted Si<111>IEEE Micro Electro Mechanical Systems Workshop,SanDiego, California,Feb 1996, p.97
Specific heat702.24 J/kg/KAt Temp=25 C.CRC Materials Science and Engineering Handbook, p.260
Static frictional force(max)0.000562 NWafer,used as a mover,min voltage to remove the mover=1176 V, bottom of the mover is glass plateIEEE Micro Electro Mechanical Systems Workshop,Jan-Feb 1991, Nara,Japan, p.151
Static frictional force(max)0.001009 NWafer,used as a mover,min voltage to move the mover=1575 V, bottom of the mover is Silicon substrate,thickness=0.5 mm.IEEE Micro Electro Mechanical Systems Workshop,Jan-Feb 1991, Nara,Japan, p.151
Wear depth(at 40uN)27 nmSingle crystal,orientation <111>,scan size=500X500 nm2,using nanotribology studies(AFM/FFM).IEEE Micro Electro Mechanical Systems Workshop,SanDiego, California, Feb 1996, p.97
Wear depth,micro(at 40uN)23 nmC+ implanted Si<111>IEEE Micro Electro Mechanical Systems Workshop,SanDiego, California,Feb 1996, p.97
Young's Modulus165 GPaSilicon substrate,isotropic & linearly thermoelastic.Mechanics of Materials,23(1996), p.314
Young's Modulus179 GPaSilicon<100>,single crystal,undoped obtained by nano indentation at a load of 0.2mN with indentation depth at peak load 24nm.J.mater.Res,Vol.12,No.1,Jan1997, p.59
Young's Modulus202 GPaSilicon<100>,single crystal,undoped,values obtained by nano indentation at a load of 15 mN with indentation depth at peak load 267 nm.J.mater.Res,Vol. 12,No.1,Jan1997, p.59
Young's Modulus62 GPaSilicon<100>,single crystal,P+type(boron doped),values obtained by nano indentation at a load of 0.2 mN with indentation depth at peak load 44 nm.J.mater.Res,Vol.12,No.1,Jan1997, p.59
Young's Modulus125 GPaSilicon<100>,single crystal,P+type(boron doped),values obtained by nano indentation at a load of 15 mN with indentation depth at peak load 318 nm.J.mater.Res,Vol.12,No.1,Jan1997, p.59
Young's Modulus163 .. 188 GPaWafer,Si<111>,value obtained by using micro-indentation test.Thin Solid Films,283(1996), p.13
Young's Modulus160 GPaSilicon<111>,crystalline,undoped polished, obtained by SAW technique,using the ns Nd:YAG at 355 nm for launching and the probe beam deflection arrangement for detecting SAW pulses.Applied Surface Science,106(1996), p.433
Young's Modulus127 GPaMaterial property used in the finite element computations of ultra microhardness indentation of thin films,both coating and substrate are assumed to be homogeneous and elastic/plastic.Thin solid films 290-291(1996), p.363
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