Used as a mover,min voltage to move the mover=1000 V, bottom of the mover is glass plate,film condition:0.273 um & deposited by vacuum-evaporation method on glass substrate.
IEEE Micro Electro Mechanical Systems Workshop,Jan-Feb 1991, Nara,Japan, p.151
Coefficient of static friction
0.3
Used as a mover,min voltage to move the mover=1400 V,bottom of the mover is Silicon substrate,film condition:1.4698 um deposited by vacuum-evaporation method on glass substrate.
IEEE Micro Electro Mechanical Systems Workshop,Jan-Feb 1991, Nara,Japan, p.151
Coefficient of static friction
0.3
Used as a mover,min voltage to move the mover=1400 V,bottom of the mover is Silicon substrate,film condition:0.273 um deposited by vacuum-evaporation method on glass substrate.
IEEE Micro Electro Mechanical Systems Workshop,Jan-Feb 1991, Nara,Japan, p.151
Static frictional force(max)
0.000407 N
Used as a mover,min voltage to move the mover=1000 V, bottom of the mover is glass plate,film condition:0.273 um & deposited by vacuum-evaporation method on glass substrate.
IEEE Micro Electro Mechanical Systems Workshop,Jan-Feb 1991, Nara,Japan, p.151
Static frictional force(max)
0.000797 N
Used as a mover,min voltage to move the mover=1400 V,bottom of the mover is Silicon substrate,film condition:1.4698 um deposited by vacuum-evaporation method on glass substrate.
IEEE Micro Electro Mechanical Systems Workshop,Jan-Feb 1991, Nara,Japan, p.151
Static frictional force(max)
0.000797 N
Used as a mover,min voltage to move the mover=1400 V,bottom of the mover is Silicon substrate,film condition:0.273 um deposited by vacuum-evaporation method on glass substrate.
IEEE Micro Electro Mechanical Systems Workshop,Jan-Feb 1991, Nara,Japan, p.151