Material: Silicon whiskers (Si)

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Property↑↓	Value↑↓	Conditions↑↓	Reference↑↓
Electrical resistivity	1e-05 .. 0.001 Ω*m	P-type,whiskers grown using complex doping by Au,Pt and B2O3 have a <111>growth direction,formed as hexagonal prisms with faces 1-30 um in width,resistivity varies by doping.	Sensors and Actuators A,30(1992), p.29
Ultimate strength	1 .. 2.4 GPa	P-type,whiskers grown using complex doping and having a<111> growth direction and 20-40um diameter.	Sensors and Actuators A,30(1992), p.29