Material: Sodium Silicate (Na2O:SiO2 ~ 1:3), film

To purchase MEMS-related materials, supplies, equipment, wafers, etc.,please visit the links section of the MEMSNet site.

Property↑↓	Value↑↓	Conditions↑↓	Reference↑↓
Refractive index	2.2	Solution,used in low temperature wafer bonding, using silicon substrate, film thickness=83.7 nm,layer produced by spinning on(3000rpm) a diluted solution of sodium silicate on silicon substrate, content of sodium silicate in solution=5%(wt),homogenity=1.457%,wavelength not given.	IEEE Micro Electro Mechanical Systems Workshop,Feb 1992,Germany, p.51
Refractive index	1.4	Solution,used in low temperature wafer bonding, using silicon substrate, film thickness=35.6 nm,layer produced by spinning on(3000rpm) a diluted solution of sodium silicate on silicon substrate, content of sodium silicate in solution=2%(wt) ,homogenity=1.437%,wavelength not given.	IEEE Micro Electro Mechanical Systems Workshop,Feb 1992,Germany, p.51
Refractive index	1.1	Solution used in low temperature wafer bonding, using silicon substrate, film thickness=7.2 nm,layer produced by spinning on(3000rpm) a diluted solution of sodium silicate on silicon substrate, content of sodium silicate in solution=0.5%(wt),homogenity=1.45%,wavelength not given.	IEEE Micro Electro Mechanical Systems Workshop,Feb 1992,Germany, p.51
Refractive index	1.2	Solution,used in low temperature wafer bonding, using silicon substrate, film thickness=3.6 nm,layer produced by spinning on(3000rpm) a diluted solution of sodium silicate on silicon substrate, content of sodium silicate in solution=0.1%(wt),homogenity=1.45%,wavelength not given.	IEEE Micro Electro Mechanical Systems Workshop,Feb 1992,Germany, p.51