Material: Titanium Aluminum (Ti3Al), film

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Property↑↓	Value↑↓	Conditions↑↓	Reference↑↓
Young's Modulus	190 GPa	Single layer deposited by DC planar magnetron sputtering on to 2 inch oxidized Si<111>wafers at ambient temp., using Ar as sputtering gas,Ar press=2 mT,for film thickness from 0.1-2.0 um.	Thin Solid Films,270(1995), p.263
Young's Modulus	189.52 GPa	Single layer deposited by DC planar magnetron sputtering on to 2 inch oxidized Si<111> wafers at ambient temp., using Ar as sputtering gas,Ar press=5 mT,for film thickness from 0.1-2 um.	Thin Solid Films,270(1995), p.263