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Material: Titanium Aluminum (TiAl), film

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Property↑↓Value↑↓Conditions↑↓Reference↑↓
Young's Modulus270 GPaSingle layer deposited by DC planar magnetron sputtering on to 2 inch oxidized Si<111>wafers at ambient temp., using Ar as sputtering gas,Ar press=2 mT,for film thickness from 0.1-2.0 um.Thin Solid Films,270(1995), p.263
Young's Modulus206.2 GPaSingle layer deposited by DC planar magnetron sputtering on to 2 inch oxidized Si<111> wafers at ambient temp., using Ar as sputtering gas,Ar press=5 mT,for film thickness from 0.1-2 um.Thin Solid Films,270(1995), p.263
Young's Modulus236.2 GPaSingle layer deposited by DC planar magnetron sputtering onto 2 inch oxidized Si<111> wafers,using Ar as sputtering gas, Ar press=10 mT for film thickness from 0.1-2 um.Thin Solid Films,270(1995), p.263
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