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Material: Titanium Oxide (TiO2), film

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Property↑↓Value↑↓Conditions↑↓Reference↑↓
Coefficient of static friction0.26Used as a mover,min voltage to remove the mover=1500 V,bottom of the mover is glass plate,film condition:0.15 um & deposited by Sol-gel method on silicon wafer.IEEE Micro Electro Mechanical Systems Workshop,Jan-Feb 1991, Nara,Japan, p.151
Coefficient of static friction0.42Used as a mover,min voltage to remove the mover=1650 V,bottom of the mover is Silicon substrate,film condition:0.15 um & deposited by Sol-gel method on silicon wafer.IEEE Micro Electro Mechanical Systems Workshop,Jan-Feb 1991, Nara,Japan, p.151
Static frictional force(max)0.000915 NUsed as a mover,min voltage to remove the mover=1500 V,bottom of the mover is glass plate,film condition:0.15 um & deposited by Sol-gel method on silicon wafer.IEEE Micro Electro Mechanical Systems Workshop,Jan-Feb 1991, Nara,Japan, p.151
Static frictional force(max)0.001107 NUsed as a mover,min voltage to remove the mover=1650 V,bottom of the mover is Silicon substrate,film condition:0.15 um & deposited by Sol-gel method on silicon wafer.IEEE Micro Electro Mechanical Systems Workshop,Jan-Feb 1991, Nara,Japan, p.151
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