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Material: Titanium (Ti), film

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Property↑↓Value↑↓Conditions↑↓Reference↑↓
Coefficient of static friction0.3Used as a mover,min voltage to move the mover=1600 V,bottom of the mover is glass plate,film condition:0.2095 um & deposited by vacuum-evaporation method on glass substrate.IEEE Micro Electro Mechanical Systems Workshop,Jan-Feb 1991, Nara,Japan, p.151
Coefficient of static friction0.28Used as a mover,min voltage to remove the mover=1350 V,bottom of the mover is Silicon substrate,film condition:0.2174 um & deposited by vacuum-evaporation method on glass substrate.IEEE Micro Electro Mechanical Systems Workshop,Jan-Feb 1991, Nara,Japan, p.151
Static frictional force(max)0.001041 NUsed as a mover,min voltage to move the mover=1600 V,bottom of the mover is glass plate,film condition:0.2095 um & deposited by vacuum-evaporation method on glass substrate.IEEE Micro Electro Mechanical Systems Workshop,Jan-Feb 1991, Nara,Japan, p.151
Static frictional force(max)0.000741 NUsed as a mover,min voltage to remove the mover=1350 V,bottom of the mover is Silicon substrate,film condition:0.2174 um & deposited by vacuum-evaporation method on glass substrate.IEEE Micro Electro Mechanical Systems Workshop,Jan-Feb 1991, Nara,Japan, p.151
Strain,limiting0.004Thin film,used in semiconductor fabrication.IEEE,Micro Electro Mechanical Systems Workshop,Feb 1990, Napa Vally,California, p.147
Young's Modulus102.6 GPaSingle layer deposited by DC planar magnetron sputtering on to 2 inch oxidized Si<111>wafers at ambient temp., using Ar as sputtering gas,Ar press=2 mT,for film thickness from 0.1-2.0 um.Thin Solid Films,270(1995), p.263
Young's Modulus110 GPaSingle layer deposited by DC planar magnetron sputtering on to 2 inch oxidized Si<111> wafers at ambient temp., using Ar as sputtering gas,Ar press=5 mT,for film thickness from 0.1-2 um.Thin Solid Films,270(1995), p.263
Young's Modulus110 GPaThin film,used in semiconductor fabrication.IEEE,Micro Electro Mechanical Systems Workshop,Feb 1990, Napa Vally,California, p.147
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