Hi all,

Is it possible/difficult to make a transistor by using P and B diffusion
firnaces?
I didn't find this information from the books at least very quickly...

If you first make p-doped pool with diffusion and then smaller n-doped pool
above that, does that make suitable structure for transistor or should you
have Ion-implantation machine that you could better define the doping area
and thichness?


- Sampo

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