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MEMSnet Home: MEMS-Talk: Etching SiO2 without affecting Aluminum
Etching SiO2 without affecting Aluminum
2003-05-15
bobo
2003-05-15
Tobias Kramer
2003-05-15
beaton@npphotonics (Bill Eaton)
2003-05-15
Kirt & Erika Zipf-Williams
2003-05-15
Mark McNie
2003-05-16
Neal Ricks
2003-05-15
Pavel Neuzil
2003-05-15
Dave Kharas
2003-05-16
[email protected]
2003-05-16
David Springer
Etching SiO2 without affecting Aluminum
Mark McNie
2003-05-15
There is a HF formulation with acetic acid, ethylyne
glycol and aluminium fluoride known as pad etch if
memory serves me right that was used to open vias
through oxide to aluminium pads known as pad etch
(search previous threads in the archive).

This may not work if you have a variety of materials
due to electrochemical potentials destroying the
passivating layer.

Best regards,

Mark

________________________________________________________

Mark McNie (Mr)
Senior Scientist - Microsystems

QinetiQ
Optronics Centre
St Andrews Rd, Malvern
Worcs., WR14 3PS, UK

EM: [email protected]
EM(home): [email protected]
Tel. : +44 (0)1684 89 4586
Fax : +44 (0)1684 89 5113
Web : www.QinetiQ.com
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----- Original Message -----
From: "bobo" 
To: 
Sent: Thursday, May 15, 2003 5:30 AM
Subject: [mems-talk] Etching SiO2 without affecting Aluminum


> Dear all,
> does anyone knows what wet etchant can etching silicon dioxide without
etching aluminum at the same time?   Thanks.
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