Hi
 The dose and energy was 2e13 and 100KeV, and annealed at 1000 deg cel in
N2 ambient for 30 min.
The problem was that after dewetting the sample with HF the four probe was
not giving a sheet resistance value, but after dewetting the sample in BOE
it was giving the sheet resistance value. There could be this possibility
of some passivating film remaining, but according to my knowldege HF is
far more attacking than BOE for removing any passivating films on the
silicon to dewet it.

 regds
ravi shankar