Hi,everybody

I want to etch the handle layer of SOI wafer up to 200um with the comb fringe
pattern by STS Multiplex ICP machine.I have designed some different comb fringes
with different feature size(3um,5um,8um,15um)and gap
size(15um,20um,25um,30um).Because the feature size and the gap size of the comb
fringe structures are different, now the lag effect is very serious.At the same
time, I will etch the handle wafer up to the buried oxid layer of SOI wafer so
the footing effect is very serious too.Have you etched so deep comb fringe with
different design parameters by ICP?How to improve the lag and footing effect in
such a ICP deep etching? Could you give me some advice or recommend some
publications/recipes on this case for my reference?

Thank you very much.

Best regards
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