Can you not use a damascene process (plate and CMP)?


Wuyong Peng  wrote:
Hi all,

I have a question which bothering me for a long time. I use SOI wafer for my
porject. After DRIE, the device layer was etched down to the buried oxide layer.
Now I need to fill these 6um wide, 20um deep trenches with metal. But I could
not find a way that guarantee uniform and nice result. Does anyone has similar
experience or good suggestions? Thank you for your time.

Wuyong Peng
NJIT
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