Hello MEMS-Greenhorn!

the standard material configuration for Anodic Bonding is typically Silicon
and sodium rich glass or two Si wafers, one of those with a thin sodium rich
glass layer.
- typically the Si wafer is not oxidized at all (except the native oxide).
Above a certain deposited oxide layer thickness  the bonding process will be
prevented due to electric isolation effect.
- standard Si wafers (200-600 µ)with native oxide + Pyrex (200-600µ)->
bonding parameters can be adapted to the substrates
- 500-2000V, 300-450 °C -> wide process window
- depends on bow, warpage and relative bond contact area of the substrates
- vacuum is for anodic bonding not relevant, it depends on your device ->
for special pressure range in sealed cavities bonding in Vacuum is
necessary.

Regards,
Markus.

SUSS MicroTec
Markus Gabriel
Product Specialist
Schleissheimer Str. 90
85748 Garching
Germany
Fon     +49 89 32007 - 313
Fax     +49 89 32007 - 162
email   [email protected]
http://www.suss.com

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Message: 5
Date: Tue, 17 Jun 2003 16:34:13 -0700 (PDT)
From: mems greenhorn 
Subject: [mems-talk] Anodic Bonding
To: [email protected]
Message-ID: <[email protected]>
Content-Type: text/plain; charset=us-ascii

Can anyone let me know where I can find a good paper on Anodic
Bonding..Trying to do the anodic bonding at device level for the first
time..so need info on the procedure involved ...
- Are there any restrictions on the type of  Oxidation ( Thermal or PECVD)
that Si wafer should have..
- What wafer thickness and oxide thickness would be ideal. ?
- What voltage and temperatures ?
- Significance of the mechanical pressure...?
- Is vaccum a must ?
Any other info that u can give to get a good bonding would be of great help
!
Thanks in advance.
MEMS_GREENHORN
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