Hi Sukanta,
it depends what kind of ething you have in mind.
1. wet chemical etching can be done by alcalic
solution with slow etch rate for <111> planes, such as
hot KOH, Tetra Methyl Ammonium Hydroxide, NaOH (CsOH,
RbOH), EDP, DPW and hydrazine.
2. wet chemical etching without preference by HF with
oxidant, such as HNO3 (and typically also CH3COOH)
called HNA
3. wet electromemical etching in F+ environment such
as HF of NH4F solution.
4. dry plasma etching by fluorine or chlorine based
plasma, such as SF6, NH3, CF4 (except for CHF3)
5. dry vapor etching without preference by XeF2
We can do for you the last one as we normally do for
our customers and partners.
Pavel Neuzil
CTO
SiMEMS Pte Ltd
Singapore

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