Hi,
    I tried to heat gold film on silicon wafers with oxide layer to 900
degree C for 10 minutes and all the film is blown out. The thickness of the
gold is about 50nm with 4 nm Ti as adhesion layer. We heat it in air. I am
not sure what could be a problem. Is it simplely that thin gold film can't
sustain that temperature or something else. We did e-beam lithography so
there is a chance that some resist is left under the gold. If that is the
problem, how can we completely remove the resist residue. The resist is pmma
and we did short time O2 plasma try to get rid of the residue, but it can't
be removed thoroughly.
    Best regards.

Zhengfan Zhang