Hello all,

I am getting very bad sputter results when SiO2 is deposited onto Al. I have
tried ceramic sputter (directly off the SiO2 target), reactive sputter (Si
target in O2 ambient) and finally SiO2 sputter in O2 ambient. The adhesion is
not good and the film thickness is almost negligible, whereas 1um is required. I
have received some successful results with reactive SiO2 sputter (which deposits
a very thin layer onto Al) and then going for SiO2 with O2 ambient sputter
though this is again a long process.

My objective is to sputter a metal onto silicon wafer and then sputter an oxide
on it. The oxide will require etching, so I am hesitant towards sputtering
Titanium then Silicon and then SiO2 for better adhesion results. Are there any
workarounds?

Are there some good metal-insulator combinations which would adhere to each
other? We have Pd, Cu, Al, Ti, Zn, Indium, Tungsten for metals and Si, Si-
nitride/oxide/carbide, ZnO, Titanium oxide for insulators. Can I obtain some
workable solution with these materials?

Thanks in advance.

Mansoor Naseer.
Sabanci University,
Istanbul, Turkey.