Hello Mamien,
Mike has a very good point. CTE can be the root problem in many kinds of
bonding. Try this:
1. Place the wafers on the hot plate and increase the heat to process temp.
2. Hold at temp to allow the top wafer temp to stabilize.
3. Apply voltage at the center of the wafer and work your way out in a spiral
or start at one edge and work your way across moving the air out to one side. I
prefer the center method.
4. MAKE SURE THE WAFERS ARE CLEAN!!! There are many wafer types that can be
bonded except for dirty wafers. If the wafers are clean enough you should see
the wafers start to bond when you bring them into contact. A gap between the
wafers due to particles can cause arcing and crack the wafers as you are seeing.
5. When you hit max current try moving the probe to a different location.
Good luck,
Feel free to contact me if you have any bonding questions,
Brad Johnson
Suss MicroTec
Applications Engineer
1-800-685-7877 Ext119
1-480-557-9370 Ext119
[email protected]
>>> [email protected] 07/25/03 04:22PM >>>
Make sure the CTE (coefficient of thermal expansion) of your glass
matches silicon. I think most people use borofoat 7740.
-Mike
>>> [email protected] 07/25/03 10:15 AM >>>
Hi All,
I've done some experiment about silicon to glass anodic bonding.
The bonding was performed at temperature 400 C and 600 V, however it's
followed by the increasing of the current, exceeding 10 mA and then I
found that my p-100 silicon and corning glass was cracked and broken,
but the bonding is still occured. I use stainless plate and gold
needle probe to apply the voltage. The silicon wafer and
glass was cleaned using acetone cleaning.
Could someone help me explaining this ?
Every comment would be appreciated.
Best regards,
mamien
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