Hi,

Any experte can give some suggestions about how to dry etch
800-1000 A Si3N4(made by PECVD 330C) with good selectivity
with photo-resist AZ4110 10000 A. We don't want to etch many
resist,because it will kill the performance. We tried SF6
(Unaxis system), it etched many resistor. Any suggestions
will be appreciated.

Thanks a lot!

Jun Chen
Email: [email protected]
Phone: 510-651-6700x102