We have used a sputtered nitride, from a si3n4 target, sputtered reactively
with nitrogen gas. , the deposition temp was low enough, 300C, for aluminum. we
have used it as an etchmask against NaOH, it stood up to that for approx.
fifteenhours.

Jan Smits,

Assoc. Prof.

Boston University,
ph:617-353-9878.
email: [email protected]