Commerically, there are is a large class of PHEMT GaAs devices
(Pseudomorhpic High Electron Mobility Transistor) which operate from 10-100
GHz.  They often have gate widths of 0.1 microns.  These devices tend to
only have at most a few dozen transistors (they are analog amplifiers), an
they are directly written with e-beam lithography.  The other mask layers
are done with standard optical lithography.

Of course, CMOS is getting into (or are into already) this range of
resolutions, also for defining transistor gates.


David Nemeth
Senior Engineer
Sophia Wireless, Inc.
14225-C Sullyfield Circle
Chantilly, VA


-----Original Message-----
From: [email protected]
[mailto:[email protected]]On
Behalf Of Jim Intrater
Sent: Friday, August 08, 2003 5:59 PM
To: General MEMS discussion
Subject: [mems-talk] 0.1 micron lithography


Can anyone provide me with a little detail on applications of 0.1 micron
lithography?

-Jim Intrater
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