Renie,
Get back to me on this request. Marcus and I work together - he is in
Germany. can you quote on specification as listed ? Let me know

regards.
Ken

Renie Duvall wrote:
> Marcus,
>
> Isonics Corporation, a local SOI wafer manufacturer located in Vacouver WA not
only produces 4"-12" SOI but also offers such services as you are requesting.
Please contact Renie Duvall 360-885-9310 x 203 for further information.
>
> -------Original Message-------
> From: Marcus Siegert 
> Sent: 08/11/03 03:40 AM
> To: mems-talk 
> Subject: [mems-talk] CMP on SOI Substrate with buried cavities (BUCA)
>
>
>>Hi Colleagues:
>
> Date: 08/11/2003
>
> I need to process edge grinding, grinding and polishing (CMP) on SOI
> Substrates with buried cavities.
> Diameter of Substrates is 100 mm.
> Handle has a thickness of 525+/-15 A^?m, DSP, BOX 600+/-60 nm, with a 3 A^?m
> deep etched adjustment groove.
> Device layer has been bonded under vacuum (about 10E-3 mbar), that means
> the membran will be bowed toward inside the cavities. Device
> thickness/Initial is 300+/-15 A^?m. Final device thickness should be 50+/-0.5
A^?m, polishing
> prime with final polish because Device-Surface has to be bondable again,
> (Surface roughness <5 Angstrom).
> Struckturing of buried cavities:
> Depth: 50+/-5 A^?m
> Extensions: c. 1500 A^?m < w(Cavity) < c. 3000 A^?m
> Pitch: Deltaw (Cavity) > c. 3500 A^?m
>
> Will provide more details after contacting.
>
> Thanks and best regards,
>
> Marcus Siegert
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>
>
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>
> _______________________________________________
> [email protected] mailing list: to unsubscribe or change your list
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> Visit us at http://www.memsnet.org/
>


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