Hi everyone,

I had sputtered a silicon dioxide membrane,the structure is as this:
Silicon wafer---Ti electrode(60nm)---Silicon dioxide(250nm)---Ti
electrode(100nm)
All the three membranes are deposited by Magnetron Sputtering.
The power of sputtering is 120W for Ti and 200W for silicon dioxide.
The area of up electrode is about 1cm^2.

The problem is,the resistance between up electrode and bottom electrode is only
170Ω!
What's wrong with my silicon dioxide membrane?
What's the most possible reason lead to a conductible silicon dioxide membrane?

Thank you.

Best regards,
Jianhua Wu