You have pin holes in the oxide and your titanium layers are touching.
Sputtered dielectric films are notorious for this problem. One solution
is to use energetic ion beam deposition or you might try a PECVD
process. Though I'm not sure even PECVD will work.

-Mike



>>> [email protected] 08/11/03 10:50PM >>>
Hi everyone,

I had sputtered a silicon dioxide membrane,the structure is as this:
Silicon wafer---Ti electrode(60nm)---Silicon dioxide(250nm)---Ti
electrode(100nm)
All the three membranes are deposited by Magnetron Sputtering.
The power of sputtering is 120W for Ti and 200W for silicon dioxide.
The area of up electrode is about 1cm^2.

The problem is,the resistance between up electrode and bottom electrode
is only 170 !
What's wrong with my silicon dioxide membrane?
What's the most possible reason lead to a conductible silicon dioxide
membrane?

Thank you.

Best regards,
Jianhua Wu
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