Jianhua Wu,

The most likely explaination to me would seem to be pinholes in the oxide,
especially at 250nm thickness.

Neal Ricks



Jianhua Wu  wrote:
Hi everyone,

I had sputtered a silicon dioxide membrane,the structure is as this:
Silicon wafer---Ti electrode(60nm)---Silicon dioxide(250nm)---Ti
electrode(100nm)
All the three membranes are deposited by Magnetron Sputtering.
The power of sputtering is 120W for Ti and 200W for silicon dioxide.
The area of up electrode is about 1cm^2.

The problem is,the resistance between up electrode and bottom electrode is only
170¦¸!
What's wrong with my silicon dioxide membrane?
What's the most possible reason lead to a conductible silicon dioxide membrane?

Thank you.

Best regards,
Jianhua Wu
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