It might be due to shorting of upper and bottom TI layers. There may be
pinholes in your SiO2 layer. See it under SEM before you deposite upper Ti
layer. I am sure you will find a large number of pinholes which make your Ti
layers shorting.

You may have to increase the thickness of SiO2 layer if your experiment
allows it. Otherwise, you have to change the sputtering conditions.

Ganesh Kumar


>From: "Jianhua Wu" 
>Reply-To: General MEMS discussion 
>To: 
>Subject: [mems-talk] My silicon dioxide membrane is not insulative
>Date: Tue, 12 Aug 2003 13:50:50 +0800
>
>Hi everyone,
>
>I had sputtered a silicon dioxide membrane,the structure is as this:
>Silicon wafer---Ti electrode(60nm)---Silicon dioxide(250nm)---Ti
>electrode(100nm)
>All the three membranes are deposited by Magnetron Sputtering.
>The power of sputtering is 120W for Ti and 200W for silicon dioxide.
>The area of up electrode is about 1cm^2.
>
>The problem is,the resistance between up electrode and bottom electrode is
>only 170¦¸!
>What's wrong with my silicon dioxide membrane?
>What's the most possible reason lead to a conductible silicon dioxide
>membrane?
>
>Thank you.
>
>Best regards,
>Jianhua Wu
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