Dear MEMS researchers:

This my first post to the mems-talk. I have a problem when using spin-on
method for diffusion in a poly-Si thin film.

Substrate: 5um thick poly-Si thin film (n-type)
Diffussant: Filmtronics Boron A (spin-on)
Driving in: normal diffusion at 800degC for 30min in pure N2 gas or RTA @
1000degC for 2min in 25% O2 and 75% N2

Problem: The I-V curve shows linear, not the rectify. (I have been careful
with the cracks and edge current leakage)

Please suggest me any reasons.

Thanks a lot

Tommy

_________________________________________________________________
与联机的朋友进行交流，请使用 MSN Messenger: http://messenger.msn.com/cn