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MEMSnet Home: MEMS-Talk: CF4 dry etch Si
CF4 dry etch Si
2003-09-02
Di Liang
2003-09-02
Balaji Lakshminarayanan
CF4 dry etch Si
Balaji Lakshminarayanan
2003-09-02
Hi,

I was able to etch approx 20-30um of Si using the following recipe.


CF4/02 - 250mT (50SCCM of CF4: 10SCCM of O2)
RF Power -  200W

I used Cr/Al layer as a mask for etching Si. The surface is not as
smooth as wet etching but it was relatively ok.

Thanks

Bala


-----Original Message-----
From: [email protected]
[mailto:[email protected]] On Behalf Of
Di Liang
Sent: Tuesday, September 02, 2003 4:21 AM
To: [email protected]
Subject: [mems-talk] CF4 dry etch Si

Dear MEMS colleagues,
I was wondering whether anyone has a very good recipe to use CF4/O2 (or
CF4/H2...) to etch single-crystal silicon. I always met problems when
using CF4/O2 (25/5sccm, 50mTorr, 100W, Plasma Thermal 790 RIE) to etch
my silicon samples. The surface of samples seem to be coated by a
polymer stuff (looks like), or just very rough surface because I could
not remove it both by Drytak or ACE/IPA. By the way, I need to etch only
2 micron and prefer anisotropic etch.
Thanks a lot!!!!


DL

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