Hey folks,

Just to add the little I know into this question.  SF6 tends to leave a film
on the inside of your chamber.  I use it to etch Tungsten.  I also use the
system (Trion minilock RIE) to etch III-V material.  We have found that
doing a high power, high flow O2 run for 5 to 10 minutes after every SF6 run
helped keep our chamber nice and clean between runs.

Brent

"Blunier, Stefan" wrote:

> Hi Jim
> It seems that everybody having a Si etching systems is very anxious to
> try. I haven't got any reply on my question.
> Greetings
> Stefan
>
> -----Original Message-----
> From: Jim Beall [mailto:[email protected]]
> Sent: Montag, 15. September 2003 16:23
> To: General MEMS discussion
> Subject: Re: [mems-talk] SF6 Glas etching
>
> Stefan -
>
> I wonder if you ever received any useful information in response to
> this inquiry?
>
> We also have an STS ASE system and were told to never do anything
> else so as to not disturb the chamber chemistry, but I wonder how
> critical this really is.
>
> Thanks,
>
> Jim
>
> >Dear colleagues
> >>From the publication of Ichiki et al. Thin Solid Films 435 (2003)
> >>62-68
> >I learned that glas
> >etching with SF6 and Ar works quiet well. When we bought 4 years ago a
> >ICP system (STS) for Si deep etching and a RIE system for glas (resp
> >SiO2, Si3N4) etching we were told from STS not to do
> >both processes in the same chamber because of reproducibility.
> >Does anyone has experience in running glas etch (SF6/Ar) and silicon
> >deep etching
> >on the same ICP system. Do I contaminate the si deep etching chamber by
> >glass etching
> >or is it possible to clean up the system without open it (no mechanical
> >clean)?
> >
> >Thanks for response.
> >Greetings
> >Stefan
>
> --
>
>   - Jim Beall 303-497-5989
>     [email protected]
>
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