hi,MEMSer
     I'm planning to process a electrostatic driven comb actuator on
bonding-SOI wafer, the resistivity of the structure layer is 0.01-0.02 Ohm
cm. whether it need a metallization?

 If yes,can I use the following method?
      _________     ___________      ___________
 __|_________|__|___________|__|___________|__Si(30um)
 _________________________________________SiO2(1um)
                                              Si
 _________________________________________

 After the structure is released (the thickness of the sacrifice layer is
about 1um), I try to sputter a Ti/Pt(50/150 nm) electrode layer on the whole
structure layer (both comb driver and electrode bonding pad), aiming for
getting both a wire bonding electrode and a metal covered comb driver.
 Is this method effective?
    _________   ___________    ___________
   |_________|  |___________|  |___________|  Ti/Pt (50/150nm)
   |_________|  |___________|  |___________|  Si(30um)
 _|_________|_|___________|_|___________|__SiO2(1um)
                                              Si
 _______________________________________

 Thank you.

 Regards
Jianhua Wu