Re: Passivation material for Si KOH-etching and Protection method
Eui-Hyeok YANG
1997-11-11
You can use a teflon film which can be spun on. If you are interested,
please let me know.
EH
--------------------------------------------
E.H.Yang, Ph.D
Fujita lab.,IIS, Tokyo Univ.
Tel:+81-3-3402-6231(ext. 2354)
Fax:+81-3-3402-5078
email:[email protected]
http://www.fujita3.iis.u-tokyo.ac.jp/~ehyang/yang.html
shpaek wrote:
>
> Dear MEMS ;
> I'm searching a passivation material for Si KOH-etching.
> It takes a long time for Si etching and
> I must protect front side of wafer.
> Al layer is deposited on the Front side.
> Does anyone tell me the material and method of protection?
>
> Si etch thickness ; 450 micron
> Si etch solution ; KOH + IPA
>
> I'll wait for your quick response.
>
>
> Sincerely yours.
>
>