Hi Nishant,
There are a number of techniques you can use to reduce or circumvent
stiction problems
1) supercritical CO2 drying after wet release. I dont know much about this
since it was done for me, but seemed to be successful every time.
2) If you don't have the tool for supercritical CO2, try dipping your
samples in hexanes right after the wet release (3 baths: etch, dip in H2O
and dip in hexanes, keeping the samples wet as you transfer from bath to
bath) and let them dry as you pull them slowly out of the hexanes.
Good luck
Jobert vanm Eisden
SUNY Albany
-----Original Message-----
From: Saurabh Nishant [mailto:[email protected]]
Sent: Friday, October 24, 2003 7:16 AM
To: [email protected]
Subject: [mems-talk] polysilicon stiction problem
Dear MEMS colleagues,
I am a student at indian institute of science and facing the problem of
stiction in polysilicon cantilivers after sacrificial layer etching.I would
appreciate if any one can suggest me some means to overcome this problem.I
suspect both the resifual stress and capillary forces are reponsible.Any
help would be highly appreciated.
thanks.
regards
nishant
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