Hello Ingo & Yilei
The 111 to 100 selectivity is 1:80 to 1:400 depending on the etch solution and
conditions. If you look for perscision, you should calibrate your process, align
well to the xtall and bias the masks per your calibrations
Shay Kaplan
[email protected] wrote:
> Hello Yilei,
>
> Etching Si with KOH-soloution is anisotroppic. The etchrate of (111)-planes is
practically zero. Therefore structures aligned parallel or perpendicular to the
<110>-flat will have no undercut. The only exception to this is a convex corner.
> Kind regards
>
> Ingo
>
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