>From: "Mahavir Sanghavi" 
>Reply-To: General MEMS discussion 
>To: 
>Subject: Re: [mems-talk] Adhesion of SU-8 with silicon dioxide substrate
>Date: Tue, 4 Nov 2003 14:03:08 -0500
>
>Michael:
>
>Even though, Su-8 is a negative resist, conc.KOH at 75 C would cause most
>of the commonly used resists to peel off. My suggestion would be to RIE
>SiO2 using Su-8 mask and then use SiO2 mask to wet etch Si. However, if you
>are having problems with your Su-8 processing. I would be able to help you
>out if you send me the process details.
>
>hope that answers your question,
>-Mahavir
>_______________________________________________

Hi Mahavir,

Thanks for your comments. Unfortunately I need to retain SU-8 as a
structural layer after KOH etching. I could KOH etch Si prior to application
of the SU-8 layer, however, I am limited in the extent to which this is
possible due to the non-planarity of the substrate and the difficulties this
would pose for spinning resist.

Regards,

Michael

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