Hello ,
We are fabricating thin Mo/Cu ( 400A/1700A) films on Silicon nitride
wafers. It seemslike the PR and developer ( AZ series PR and 400K
developer from Clariant Corp) we are using for the Cu ething mask is
eating our exposed Mo layer. It only happens when we use the 1:4 diluted
developer with DI water ( the full strength developer takes off the PR).
 Has any one seen this type of problem
before and most importantly, is there any PR and developer combination
that will not cause such a problem.
Thanks
Shafinaz Ali
Dept of Physics
UW Madison

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