Hi,

After releasing the substrate for my devices, which are made using SOI
wafers, the sacrificial oxide layer wants to expand to its "natural size"
since it was previously held under compressive stress (came that way from
the vendor). I am trying to quantify the amount of compressive stress in my
SOI wafers. I also want to know the amount that the oxide layer will expand
when released. Does anyone have good tips as to where I can find this
information, such as journal articles or websites? Any help would be greatly
appreciated!

Thank you!
Patrick Lu