Dear Mems-Talk Users,

I am trying to RF sputter SiO2 from a 2" target on a torus magnetron onto 3"
bare Si substrate.  However, I obtain very low deposition rates : 0.06
angstroms / second !!!  I would expect 1-2 A/sec.

The process is done at 50 mtorr, 30 sccm Ar flow (no additional O2 flow),
150 W RF power.  The magnetron-substrate distance is 9 cm, and the substrate
holder is water cooled.  The substrate is Ar plasma cleaned prior to
deposition.

What may went wrong in the above process?  Next time I will try to reduce
the pressure to 5-10 mtorr ???  I will greatly appreciate any other
suggestion.

Thank you and Best Regards,

Oray Orkun Cellek
Ph. D. Student
Electrical & Electronics Engineering Department
Middle East Technical University
06531 Ankara
Turkey
Tel : +90 312 210 4579
Fax : +90 312 210 1261
e-mail : [email protected]