An Oxygen plasma clean at the end of your process cycle can help get rid
of the polymers.

Additionally the following can help: start with deposition cycle first,
depending on the aspect ratio of the features you are etching use a
significantly shorter deposition time (for example, less than half of
the etch time) and/or end with a long etch cycle at the end.

The actual cycle times for deposition, etch and/or oxygen plasma clean
would depend on the aspect ratio of the features, available photo-resist
at the end of the process cycle and also the etch rates for the oxygen
plasma clean. You may need to do a parametric experimental study for the
cycle times, coil/platen power and pressures to optimize the
fluorocarbon removal.

Debjyoti Banerjee, Ph.D.
Microfluidics Engineer
NanoInk, Inc.
215 E. Hacienda Avenue
Campbell, CA 95008.
Ph: (408) 379-9069 x202
Fax: (408) 379-9072
Email: [email protected]
www.nanoink.net

-----Original Message-----
From: [email protected]
[mailto:[email protected]] On Behalf Of
roberto Campedelli
Sent: Friday, December 05, 2003 6:29 AM
To: [email protected]
Cc: [email protected]
Subject: [mems-talk] fluorocarbon residue removal in silicon DRIE

Hello, did you solve the problem with removing fluorocarbon polymers?

Roberto Campedelli
process engineer STMicroelectronics

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