Hello Andrew,

We use Arch Chemicals "Pad Etch 16:3:3"  to etch through about 6 microns of
TEOS PECVD deposited SiO2.  When heated to about 60 deg C, this process
takes us about 8 minutes.  It is a much quicker alternative to a Deep RIE
process (60 min per wafer), and we can also etch many wafers at a time.

Chris


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Sent: Saturday, December 13, 2003 7:42 PM
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Subject: MEMS-talk Digest, Vol 14, Issue 13

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