You may get away with a low-temp process, such as sputtering.  Normal
poly dep temps of 620 will cause grain growth in your amorphous silicon,
in fact I believe anything above 500 C will cause crystallization.
There may be a fundamental problem with your request as well: temps high
enough to create polysilicon may ruin your amorphous, unless something
like sputtering can give you poly one chunk at a time.

There is an academic vendor for a poly sputtering process listed on the
mems-exchange website http://www.mems-exchange.org/catalog/P1427/ .
Mems-exchange can tell you who.  They say minimum wafer of 75 mm, but
one can always clamp smaller pieces on the chuck.

IMTMEMS.com might also be interested in doing this for you as they do a
lot of sputtering.

Try also http://www.plasmaquest.co.uk/projects.htm , listing a tool they
sell to do what you're probably trying to do.

I would also suggest a web search for sputtering of poly-silicon in general.


O'Kelly, John A. wrote:

>Hello,
>
>       I am interested in finding a facility for depositing polysilicon on
small amorphous SiO2 wafers.  The wafers are
>a bit less than an inch in diameter.  We are located in Redmond, WA near
Seattle.  It would be a bonus to find a
>facility nearby.
>
>Thanks for your help.
>
>
>Regards,
>
>John O'Kelly
>Aerospace and Electronic Systems
>Honeywell, Intl.
>15001 NE 36th St.
>Redmond, WA 98073
>
>
>
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