Hi, Rajan,

One Problem is probably due to strong concentration of your developer.
You might try:
1) Mix developer with DI water. For AZ developer or FM312, you can
try ratio at 1:1.

2) If your developer can not mix with DI, you can dip your wafer in developer,
say 5 sec each time,
then rinse in DI to inspect.

Good luck,
Eric

-----Original Message-----
From: [email protected] [mailto:[email protected]]
Sent: Thursday, January 08, 2004 12:04 PM
To: General MEMS discussion
Subject: Re: [mems-talk] hard bake before HF


thanks bob,gururaj,garber
yeha iam doing Sio2 etching....today i got one another problem after Uv light
rays frommask alinger i did not get any pattern and when i put wafer into
developler the developler did hit photoresit i wondered there problem in mask
alinger light or developer solution i think its mask alinger UV rays because by
eye there is nothing seems pattern like thing.
regards
rajan malik

Quoting [email protected]:

> Rajan:
>
> Are you etching silicon or silicon dioxide? HF by itself is not that
> good of a silicon etcher but does wonders on silicon dioxide. If you are
> trying to etch silicon dioxide then I would suggest a buffered oxide
> etch with a ratio of about 6:1. If that is the case then a hardbake at
> 110 degrees C at 30 minutes in a box oven or 1-2 minutes on a hot plate
> should give you good resistance to lifting of the photoresist. It is
> common practice to use HMDS prior to photoresist coating as this really
> helps with adhesion of photo to oxide. You might want to contact Bill
> Moffet at Yield Engineering for more details. They are located in N.
> California. Bob Henderson
>
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Rajan Malik
Graduate Student
Electrical Engg.
University of south Florida