Isaac,
       Why use Cl a dangerous gas that requires a lot of safety precautions.
Any Fluorine containing gas will attack any silicon compound.  This CF4,SF6,
both common and relatively safe gasses to use.  I am not sure but I suspect that
a fluorine containing plasma will not attack Mo.
  hope this helps Bill Moffat

-----Original Message-----
From: Isaac Wing Tak Chan [mailto:[email protected]]
Sent: Monday, January 12, 2004 2:14 PM
To: General MEMS discussion
Subject: [mems-talk] Does Cl-containing plasma attack Mo?


Dear all,

        Could someone tell me whether Cl-containing plasma attack Mo or
not? If there is a reference that directly talk about that, would you
please let me know? My goal is to have a plasma that would attack silicon,
silicon nitride, and silicon oxide, but would not attack Mo, at least not
by RIE. Would Cl-containing plasma achieve this purpose? I do not see any
reference that talk about etching Mo with Cl-containing plasma. Thanks for
your help.


Yours sincerely,

Isaac Chan

Ph.D. Candidate
Dept. Electrical & Computer Engineering
University of Waterloo
200 University Ave. W
Waterloo, Ontario, Canada
N2L 3G1
Tel: (519) 888-4567, ext. 6014
Fax: (519) 746-6321
[email protected]
http://www.ece.uwaterloo.ca/~a-sidic


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