"Silicon micromachining using a high-density plasma source"J. Phys. D: Appl.
Phys. 34 (2001) 2769-2774
Or you can download it from STS web site.


----- Original Message -----
From: 
To: "General MEMS discussion" 
Sent: Tuesday, January 13, 2004 1:29 AM
Subject: [mems-talk] APC angle in ICP process


>
> Hi,
> Am using an STS ICP Deep Reactive Ion Etcher. Have noticed that the APC
angle
> is slightly different in different protocols and this seems to affect the
etch
> outcome. Could I ask what is APC angle and how does it affect etch profile
and
> speed. Thanks.
>
> Regards,
> Melissa
>
>
>
>